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The semiconductor device generally includes a ferroelectric (FE) semiconductor device having a channel region a gate oxide a FE region, wherein the gate oxide is disposed between the FE region and the channel region a gate region, wherein the FE region is disposed between the gate oxide and the gate region a first semiconductor region disposed adjacent to the channel region and a second semiconductor region disposed adjacent to the channel region. Its sole purpose is to present some concepts of one or more aspects of the disclosure in a simplified form as a prelude to the more detailed description that is presented later.Ĭertain aspects of the present disclosure are directed to a semiconductor device.
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This summary is not an extensive overview of all contemplated features of the disclosure, and is intended neither to identify key or critical elements of all aspects of the disclosure nor to delineate the scope of any or all aspects of the disclosure. The following presents a simplified summary of one or more aspects of the present disclosure, in order to provide a basic understanding of such aspects. There are many different types of memory, which may be implemented using any of various suitable technologies. In the simplest form, the processor executes program instructions by performing one or more arithmetic functions on data stored in memory. The processor controls the execution of program instructions, arithmetic functions, and access to memory and peripherals. BACKGROUNDĮlectronic devices including processors and memory are used extensively today in almost every electronic application. The teachings of the present disclosure relate generally to electronic systems, and more particularly, to a device implemented with a ferroelectric semiconductor device.